Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

T Alzanki; N Bennett; R Gwilliam; C Jeynes; P Bailey; T Noakes; B Sealy

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Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

Journal article

Peer reviewed

Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

T Alzanki, N Bennett, R Gwilliam, C Jeynes, P Bailey, T Noakes and B Sealy

JOURNAL OF ENGINEERING RESEARCH, Vol.2(1), pp.121-132

01/03/2014

Abstract

Science & Technology

Technology

Engineering

Multidisciplinary

Engineering

Rutherford backscattering

Medium Energy Ion Scattering

Hall scattering factor

Hall effect

rapid thermal annealing

antimony

bulk silicon

strained silicon

SI

JUNCTIONS

PROFILES

MOBILITY

DEFECTS

DOPANT

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Title: Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon
Creators: T Alzanki
N Bennett
R Gwilliam
C Jeynes
P Bailey
T Noakes
B Sealy
Publication Details: JOURNAL OF ENGINEERING RESEARCH, Vol.2(1), pp.121-132
Publisher: ACADEMIC PUBLICATION COUNCIL
Date published: 01/03/2014
Date submitted: 17/05/2017
Identifiers: 99516563802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

Abstract

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