Tuning the inherent magnetoresistance of InSb thin films

T Zhang; JJ Harris; WR Branford; YV Bugoslavsky; SK Clowes; LF Cohen; A Husmann; SA Solin

doi:10.1063/1.2162666

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Tuning the inherent magnetoresistance of InSb thin films

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Tuning the inherent magnetoresistance of InSb thin films

T Zhang, JJ Harris, WR Branford, YV Bugoslavsky, SK Clowes, LF Cohen, A Husmann and SA Solin

APPLIED PHYSICS LETTERS, Vol.88(1), pp.?-?

02/01/2006

DOI: https://doi.org/10.1063/1.2162666

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

IMPURITY BAND CONDUCTION

MOLECULAR-BEAM EPITAXY

PARALLEL CONDUCTION

MAGNETIC-FIELD

SEMICONDUCTORS

TRANSPORT

MOBILITY

GAAS(100)

SENSORS

DENSITY

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Title: Tuning the inherent magnetoresistance of InSb thin films
Creators: T Zhang
JJ Harris
WR Branford
YV Bugoslavsky
SK Clowes
LF Cohen
A Husmann
SA Solin
Publication Details: APPLIED PHYSICS LETTERS, Vol.88(1), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 02/01/2006
Date submitted: 27/05/2010
Identifiers: 99516483102346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Tuning the inherent magnetoresistance of InSb thin films

Abstract

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