The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

MJ Ashwin; RE Pritchard; RC Newman; TB Joyce; TJ Bullough; J Wagner; C Jeynes; SJ Breuer; R Jones; PR Briddon; S Oberg

doi:10.1063/1.363803

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The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

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The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

MJ Ashwin, RE Pritchard, RC Newman, TB Joyce, TJ Bullough, J Wagner, C Jeynes, SJ Breuer, R Jones, PR Briddon, …

JOURNAL OF APPLIED PHYSICS, Vol.80(12), pp.6754-6760

15/12/1996

DOI: https://doi.org/10.1063/1.363803

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

P-TYPE GAAS

HYDROGEN COMPLEXES

INGAAS

TRIMETHYLGALLIUM

DECOMPOSITION

MOMBE

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Title: The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
Creators: MJ Ashwin
RE Pritchard
RC Newman
TB Joyce
TJ Bullough
J Wagner
C Jeynes
SJ Breuer
R Jones
PR Briddon
S Oberg
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.80(12), pp.6754-6760
Publisher: AMER INST PHYSICS
Date published: 15/12/1996
Date submitted: 17/05/2017
Identifiers: 99516298902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Abstract

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