Abstract
The effect of gamma-ray, neutron and electron beam irradiation on index-guided laser diodes was investigated off-line. The laser diodes subjected to this evaluation were AlGaAs, low power (8 mW), single transversal mode lasers emitting in the near-IR. The diodes degradation was assessed up to the total gamma dose of 1.23 MGy, the total electron beam dose of 0.6 MGy, and to the neutron fluence of 1.2 × 1013 n/cm2. The electrical, optical and optoelectronic characteristics were studied. The major irradiation induced changes are related to the embedded photodiode responsivity, the laser threshold current and its external quantum efficiency.