Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

M Secchi; E Demenev; JL Colaux; D Giubertoni; R Dell'Anna; E Iacob; M Gwilliam; C Jeynes; M Bersani

doi:10.1016/j.apsusc.2015.08.083

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Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

Journal article

Peer reviewed

Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

M Secchi, E Demenev, JL Colaux, D Giubertoni, R Dell'Anna, E Iacob, M Gwilliam, C Jeynes and M Bersani

APPLIED SURFACE SCIENCE, Vol.356, pp.422-428

30/11/2015

DOI: https://doi.org/10.1016/j.apsusc.2015.08.083

Abstract

Science & Technology

Physical Sciences

Technology

Chemistry

Physical

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Chemistry

Materials Science

Physics

SIMS protocol

Ge1-xSnx

Nanotopography

Ripple

ION-BOMBARDMENT

SPECTROMETRY

TOPOGRAPHY

ROUGHNESS

GERMANIUM

SURFACES

CS+

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Title: Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy
Creators: M Secchi
E Demenev
JL Colaux
D Giubertoni
R Dell'Anna
E Iacob
M Gwilliam
C Jeynes
M Bersani
Publication Details: APPLIED SURFACE SCIENCE, Vol.356, pp.422-428
Publisher: ELSEVIER SCIENCE BV
Date published: 30/11/2015
Date submitted: 05/01/2016
Identifiers: 99516082802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

Abstract

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