Multiphysics Modeling of RF and Microwave High-Power Transistors

PH Aaen; J Wood; D Bridges; L Zhang; E Johnson; JA Pla; T Barbieri; CM Snowden; JP Everett; MJ Kearney

doi:10.1109/TMTT.2012.2224366

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Multiphysics Modeling of RF and Microwave High-Power Transistors

Journal article

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Multiphysics Modeling of RF and Microwave High-Power Transistors

PH Aaen, J Wood, D Bridges, L Zhang, E Johnson, JA Pla, T Barbieri, CM Snowden, JP Everett and MJ Kearney

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol.60(12), pp.4013-4023

01/12/2012

DOI: https://doi.org/10.1109/TMTT.2012.2224366

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

Electrothermal

global modeling

laterally diffused metal-oxide-semiconductor (LDMOS) transistor

power field-effect transistor (FET)

DESIGN

FETS

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Title: Multiphysics Modeling of RF and Microwave High-Power Transistors
Creators: PH Aaen
J Wood
D Bridges
L Zhang
E Johnson
JA Pla
T Barbieri
CM Snowden
JP Everett
MJ Kearney
Publication Details: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol.60(12), pp.4013-4023
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/12/2012
Date submitted: 07/03/2013
Identifiers: 99516011802346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Multiphysics Modeling of RF and Microwave High-Power Transistors

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