Accurate RBS measurement of ion implant doses in a silicon

G Boudreault; C Jeynes; E Wendler; A Nejim; RP Webb; U Watjen

doi:10.1002/sia.1235

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Accurate RBS measurement of ion implant doses in a silicon

Journal article

Peer reviewed

Accurate RBS measurement of ion implant doses in a silicon

G Boudreault, C Jeynes, E Wendler, A Nejim, RP Webb and U Watjen

SURFACE AND INTERFACE ANALYSIS, Vol.33(6), pp.478-486

01/06/2002

DOI: https://doi.org/10.1002/sia.1235

Abstract

Science & Technology

Physical Sciences

Chemistry

Physical

Chemistry

CHEMISTRY

PHYSICAL

Rutherford backscattering spectrometry

ion implantation

dosimetry

standards

silicon energy loss

SURFACE-ANALYSIS

ENERGY-LOSS

SI

BACKSCATTERING

CALIBRATION

SIMULATION

HE-4

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Title: Accurate RBS measurement of ion implant doses in a silicon
Creators: G Boudreault
C Jeynes
E Wendler
A Nejim
RP Webb
U Watjen
Publication Details: SURFACE AND INTERFACE ANALYSIS, Vol.33(6), pp.478-486
Publisher: WILEY-BLACKWELL
Date published: 01/06/2002
Date submitted: 17/05/2017
Identifiers: 99515818102346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Accurate RBS measurement of ion implant doses in a silicon

Abstract

Files and links (1)

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