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A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF(2) Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant
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A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF(2) Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant

M Kah, AJ Smith, JJ Hamilton, SH Yeong, B Columbeau, R Gwilliam, RP Webb and KJ Kirkby
ION IMPLANTATION TECHNOLOGY 2008, Vol.1066, pp.51-54
17th International Conference on Ion Implantation Technology (Monterey, CA, 08/06/2008–13/06/2008)
01/01/2008

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Materials Science Multidisciplinary Physics Applied Engineering Materials Science Physics B BF(2) pre-amorphization silicon-on-insulator BORON FLUORINE SI DIFFUSION
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