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The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC
Conference presentation   Peer reviewed

The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC

A Kozanecki, C Jeynes, NP Barradas, BJ Sealy and W Jantsch
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.148(1-4), pp.512-516
11th International Conference on Ion Beam Modification of Materials (IBMM98) (ROYAL TROP INST, AMSTERDAM, NETHERLANDS, 31/08/1998 - 04/09/1998)
01/01/1999
DOI: https://doi.org/10.1016/S0168-583X(98)00708-3

Abstract

Science & Technology Technology Physical Sciences Instruments & Instrumentation Nuclear Science & Technology Physics Atomic Molecular & Chemical Physics Nuclear Physics INSTRUMENTS & INSTRUMENTATION NUCLEAR SCIENCE & TECHNOLOGY PHYSICS ATOMIC MOLECULAR & CHEMICAL PHYSICS NUCLEAR ion implantation SiC erbium recrystallisation photoluminescence SILICON-CARBIDE
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