Concentration profiles of antimony-doped shallow layers in silicon

T Alzanki; R Gwilliam; N Emerson; Z Tabatabaian; C Jeynes; BJ Sealy

doi:10.1088/0268-1242/19/6/012

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Concentration profiles of antimony-doped shallow layers in silicon

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Concentration profiles of antimony-doped shallow layers in silicon

T Alzanki, R Gwilliam, N Emerson, Z Tabatabaian, C Jeynes and BJ Sealy

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(6), pp.728-732

01/06/2004

DOI: https://doi.org/10.1088/0268-1242/19/6/012

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Title: Concentration profiles of antimony-doped shallow layers in silicon
Creators: T Alzanki
R Gwilliam
N Emerson
Z Tabatabaian
C Jeynes
BJ Sealy
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(6), pp.728-732
Publisher: IOP PUBLISHING LTD
Date published: 01/06/2004
Date submitted: 24/10/2014
Identifiers: 99515200602346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Concentration profiles of antimony-doped shallow layers in silicon

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