Abstract
Electron spin relaxation times have been measured in InSb and InAs quantum wells and epi-layers in a moderate (<4T) external magnetic field by means of time-resolved optical orientation using circularly polarised light. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the DP dephasing process is suppressed. At the high field limit the EY relaxation process dominates, enabling its direct determination. Conversely, in the Voigt configuration an additional efficient spin dephasing mechanism dominates and shortens the electron spin lifetime considerably with B-2. We demonstrate that for narrow gap semiconductors simply changing the direction of the magnetic field of 1T can alter the electron spin lifetime by one order of magnitude.