Abstract
Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the fi rst observation of direct optical transitions from the silicon band edge to internal f -levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu-implanted silicon devices display a greatly enhanced electroluminescence effi ciency of 8%. Also observed is the fi rst crystal fi eld splitting in Ce luminescence. Mid-IR silicon photodetectors with specifi c detectivities comparable to existing state-of-theart mid-IR detectors are demonstrated.