The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films

Richard Smith; J. Plaza; D. Ghita; M Sanchez; B.J Garcia; A. Munoz-Martin; A. Climent-Font

doi:10.1016/j.nimb.2008.01.024

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The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films

Richard Smith, J. Plaza, D. Ghita, M Sanchez, B.J Garcia, A. Munoz-Martin and A. Climent-Font

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films, Vol.266(8)

26/01/2008

DOI: https://doi.org/10.1016/j.nimb.2008.01.024

Abstract

GaAs1−xNxHI-ERDANRA14N(α

p)17ORBS

N profiles of several GaAs1−xNx epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si6+ beam, and (2) nuclear reaction analysis (NRA) with the 14N(α, p)17O reaction, also with RBS, using a 3.7 MeV 4He+ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.

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Title: The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films
Creators: Richard Smith
J. Plaza
D. Ghita
M Sanchez
B.J Garcia
A. Munoz-Martin
A. Climent-Font
Publication Details: The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films, Vol.266(8)
Publisher: Elsevier
Date submitted: 20/03/2020
Identifiers: 99514994702346
Academic Unit: School of Computer Science and Electronic Engineering
Resource Type: Journal article

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films

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