PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON

J THORNTON; RP WEBB; IH WILSON; KC PAUS

doi:10.1088/0268-1242/3/4/002

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PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON

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PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON

J THORNTON, RP WEBB, IH WILSON and KC PAUS

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.3(4), pp.281-285

01/04/1988

DOI: https://doi.org/10.1088/0268-1242/3/4/002

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Science & Technology

Technology

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Condensed Matter

Engineering

Materials Science

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ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

CONDENSED MATTER

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Title: PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON
Creators: J THORNTON
RP WEBB
IH WILSON
KC PAUS
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.3(4), pp.281-285
Publisher: IOP PUBLISHING LTD
Date published: 01/04/1988
Date submitted: 17/05/2017
Identifiers: 99514760302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON

Abstract

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