Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

PT Greenland; G Matmon; BJ Villis; ET Bowyer; J Li; BN Murdin; AFG van der Meer; B Redlich; CR Pidgeon; G Aeppli

doi:10.1103/PhysRevB.92.165310

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Journal article

Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

PT Greenland, G Matmon, BJ Villis, ET Bowyer, J Li, BN Murdin, AFG van der Meer, B Redlich, CR Pidgeon and G Aeppli

PHYSICAL REVIEW B, Vol.92(16), ARTN 16531

13/10/2015

DOI: https://doi.org/10.1103/PhysRevB.92.165310

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

RYDBERG STATES

SILICON

GENERATION

GERMANIUM

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Title: Quantitative analysis of electrically detected Ramsey fringes in P-doped Si
Creators: PT Greenland
G Matmon
BJ Villis
ET Bowyer
J Li
BN Murdin
AFG van der Meer
B Redlich
CR Pidgeon
G Aeppli
Publication Details: PHYSICAL REVIEW B, Vol.92(16), ARTN 16531
Publisher: AMER PHYSICAL SOC
Date published: 13/10/2015
Date submitted: 17/05/2017
Identifiers: 99514701002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

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