X-ray detector with thick epitaxial GaAs grown by chemical reaction

GC Sun; M Lenoir; E Breelle; H Samic; JC Bourgoin; H El-Abbassi; PJ Sellin; JP Montagne

doi:10.1109/TNS.2003.815349

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X-ray detector with thick epitaxial GaAs grown by chemical reaction

Conference presentation

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X-ray detector with thick epitaxial GaAs grown by chemical reaction

GC Sun, M Lenoir, E Breelle, H Samic, JC Bourgoin, H El-Abbassi, PJ Sellin and JP Montagne

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol.50(4), pp.1036-1038

Nuclear Science Symposium (NSS)/Symposium on Nuclear Power Systems (SNPS) (NORFOLK, VIRGINIA, 10/11/2002–16/11/2002)

01/08/2003

DOI: https://doi.org/10.1109/TNS.2003.815349

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Nuclear Science & Technology

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

NUCLEAR SCIENCE & TECHNOLOGY

epitaxy

GaAs

X-ray detector

GALLIUM-ARSENIDE

N-GAAS

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Title: X-ray detector with thick epitaxial GaAs grown by chemical reaction
Creators: GC Sun
M Lenoir
E Breelle
H Samic
JC Bourgoin
H El-Abbassi
PJ Sellin
JP Montagne
Contributors: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC (Publisher)
Publication Details: IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol.50(4), pp.1036-1038
Conference: Nuclear Science Symposium (NSS)/Symposium on Nuclear Power Systems (SNPS) (NORFOLK, VIRGINIA, 10/11/2002–16/11/2002)
Publication Date: 01/08/2003
Identifiers: 99514601502346
Academic Unit: University of Surrey
Resource Type: Conference presentation

X-ray detector with thick epitaxial GaAs grown by chemical reaction

Abstract

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