- Title
- Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI
- Creators
- JJ HamiltonEJH CollartB ColombeauC JeynesM BersaniD GiubertoniJA SharpNEB CowernKJ Kirkby
- Contributors
- ELSEVIER SCIENCE BV (Publisher)
- Publication Details
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.237(1-2), pp.107-112
- Conference
- 15th International Conference on Ion Implantation Technology (Taipei, TAIWAN, 25/10/2004 - 27/10/2004)
- Date published
- 01/08/2005
- Date submitted
- 17/05/2017
- Identifiers
- 99514459302346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.237(1-2), pp.107-112
15th International Conference on Ion Implantation Technology (Taipei, TAIWAN, 25/10/2004 - 27/10/2004)
01/08/2005
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