Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

H-W Huebers; SG Pavlov; SA Lynch; T Greenland; KL Litvinenko; B Murdin; B Redlich; AFG van der Meer; H Riemann; NV Abrosimov; P Becker; H-J Pohl; RK Zhukavin; VN Shastin

doi:10.1103/PhysRevB.88.035201

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Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

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Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

H-W Huebers, SG Pavlov, SA Lynch, T Greenland, KL Litvinenko, B Murdin, B Redlich, AFG van der Meer, H Riemann, NV Abrosimov, …

PHYSICAL REVIEW B, Vol.88(3), pp.?-?

02/07/2013

DOI: https://doi.org/10.1103/PhysRevB.88.035201

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

ISOTOPICALLY ENRICHED SI-28

THERMAL-CONDUCTIVITY

DONOR STATES

SI

SEMICONDUCTORS

TRANSITIONS

RELAXATION

EMISSION

HYDROGEN

PHONONS

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Title: Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon
Creators: H-W Huebers
SG Pavlov
SA Lynch
T Greenland
KL Litvinenko
B Murdin
B Redlich
AFG van der Meer
H Riemann
NV Abrosimov
P Becker
H-J Pohl
RK Zhukavin
VN Shastin
Publication Details: PHYSICAL REVIEW B, Vol.88(3), pp.?-?
Publisher: AMER PHYSICAL SOC
Date published: 02/07/2013
Date submitted: 03/08/2013
Identifiers: 99514451702346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Journal article

Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

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