Nonvolatile memory from single-walled carbon nanotube-based field effect transistors

SG Wang; PJ Sellin; Q Zhang; DJJ Yang

doi:10.2174/1573413052953147

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Nonvolatile memory from single-walled carbon nanotube-based field effect transistors

Journal article

Peer reviewed

Nonvolatile memory from single-walled carbon nanotube-based field effect transistors

SG Wang, PJ Sellin, Q Zhang and DJJ Yang

CURRENT NANOSCIENCE, Vol.1(1), pp.43-46

01/01/2005

DOI: https://doi.org/10.2174/1573413052953147

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Science & Technology

Life Sciences & Biomedicine

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Biotechnology & Applied Microbiology

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Materials Science

BIOTECHNOLOGY & APPLIED MICROBIOLOGY

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NANOSCIENCE & NANOTECHNOLOGY

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Title: Nonvolatile memory from single-walled carbon nanotube-based field effect transistors
Creators: SG Wang
PJ Sellin
Q Zhang
DJJ Yang
Publication Details: CURRENT NANOSCIENCE, Vol.1(1), pp.43-46
Publisher: BENTHAM SCIENCE PUBL LTD
Date published: 01/01/2005
Date submitted: 17/05/2017
Identifiers: 99514208902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Nonvolatile memory from single-walled carbon nanotube-based field effect transistors

Abstract

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