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Spin-galvanic effect due to optical spin orientation in <i>n</i>-type GaAs quantum well structures
Journal article   Open access  Peer reviewed

Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

S. D. Ganichev, Petra Schneider, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, B. N. Murdin, P. J. Phillips, …
Physical Review B, Vol.68(081302)
Physical Review B
29/08/2003

Abstract

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

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