Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation

K Fobelets; R Ferguson; V Gaspari; E Velazquez; K Michelakis; S Despotopoulos; J Zhang; C Papavassiliou

doi:10.1109/ESSDERC.2002.194991

Back

Journal article

Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation

K Fobelets, R Ferguson, V Gaspari, E Velazquez, K Michelakis, S Despotopoulos, J Zhang and C Papavassiliou

European Solid-State Device Research Conference, pp.555-558

01/01/2002

DOI: https://doi.org/10.1109/ESSDERC.2002.194991

Abstract

N-channel enhancement mode Si/SiGe MOSFETs are characterised and studied over a wide temperature range of 10K<T<300K. It is shown that the sensitivity of quantum well based MODFETs to temperature changes results in an optimal operation temperature around 80K. The influence of LDD structures at sufficiently high drain voltages is analysed.

Metrics

26 Record Views

Details

Title: Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation
Creators: K Fobelets
R Ferguson
V Gaspari
E Velazquez
K Michelakis
S Despotopoulos
J Zhang
C Papavassiliou
Publication Details: European Solid-State Device Research Conference, pp.555-558
Date published: 01/01/2002
Date submitted: 17/05/2017
Identifiers: 99514011702346
Academic Unit: University of Surrey
Resource Type: Journal article

Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation

Abstract

Metrics

Details

Usage Policy