STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING

KR STRICKLAND; SC EDWARDS; JK WIGMORE; RA COLLINS; C JEYNES

doi:10.1002/sia.740180810

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STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING

Journal article

Peer reviewed

STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING

KR STRICKLAND, SC EDWARDS, JK WIGMORE, RA COLLINS and C JEYNES

SURFACE AND INTERFACE ANALYSIS, Vol.18(8), pp.631-636

01/08/1992

DOI: https://doi.org/10.1002/sia.740180810

Abstract

Science & Technology

Physical Sciences

Chemistry

Physical

Chemistry

CHEMISTRY

PHYSICAL

DIFFUSE-SCATTERING

SURFACES

PULSES

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Title: STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING
Creators: KR STRICKLAND
SC EDWARDS
JK WIGMORE
RA COLLINS
C JEYNES
Publication Details: SURFACE AND INTERFACE ANALYSIS, Vol.18(8), pp.631-636
Publisher: WILEY-BLACKWELL
Date published: 01/08/1992
Date submitted: 17/05/2017
Identifiers: 99513796802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING

Abstract

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