GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

DJ DUNSTAN; RH DIXON; P KIDD; LK HOWARD; VA WILKINSON; JD LAMBKIN; C JEYNES; MP HALSALL; D LANCEFIELD; MT EMENY; PJ GOODHEW; KP HOMEWOOD; BJ SEALY; AR ADAMS

doi:10.1016/0022-0248(93)90808-A

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GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

Journal article

Peer reviewed

GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

DJ DUNSTAN, RH DIXON, P KIDD, LK HOWARD, VA WILKINSON, JD LAMBKIN, C JEYNES, MP HALSALL, D LANCEFIELD, MT EMENY, …

JOURNAL OF CRYSTAL GROWTH, Vol.126(4), pp.589-600

01/02/1993

DOI: https://doi.org/10.1016/0022-0248(93)90808-A

Abstract

Science & Technology

Physical Sciences

Technology

Crystallography

Materials Science

Multidisciplinary

Physics

Applied

Materials Science

Physics

CRYSTALLOGRAPHY

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

QUANTUM-WELLS

MISFIT DISLOCATIONS

CRITICAL THICKNESS

LAYER

RELAXATION

STRAIN

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Title: GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS
Creators: DJ DUNSTAN
RH DIXON
P KIDD
LK HOWARD
VA WILKINSON
JD LAMBKIN
C JEYNES
MP HALSALL
D LANCEFIELD
MT EMENY
PJ GOODHEW
KP HOMEWOOD
BJ SEALY
AR ADAMS
Publication Details: JOURNAL OF CRYSTAL GROWTH, Vol.126(4), pp.589-600
Publisher: ELSEVIER SCIENCE BV
Date published: 01/02/1993
Date submitted: 17/05/2017
Identifiers: 99513790502346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

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