Masked ion damage and implantation for device fabrication

MG Blamire; DJ Kang; G Burnell; NH Peng; R Webb; C Jeynes; JH Yun; SH Moon; B Oh

doi:10.1016/S0042-207X(02)00303-2

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Masked ion damage and implantation for device fabrication

Conference presentation

Peer reviewed

Masked ion damage and implantation for device fabrication

MG Blamire, DJ Kang, G Burnell, NH Peng, R Webb, C Jeynes, JH Yun, SH Moon and B Oh

VACUUM, Vol.69(1-3), pp.11-15

12th International School on Vacuum, Electron and Ion Technologies (VARNA, BULGARIA, 17/09/2001 - 21/09/2001)

24/12/2002

DOI: https://doi.org/10.1016/S0042-207X(02)00303-2

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Physics

Applied

Materials Science

Physics

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

ion implantation

superconducting devices

nanotechnology

SUPERCONDUCTOR JOSEPHSON-JUNCTIONS

YBA2CU3O7-DELTA THIN-FILMS

BEAM IRRADIATION

ELECTRON

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Title: Masked ion damage and implantation for device fabrication
Creators: MG Blamire
DJ Kang
G Burnell
NH Peng
R Webb
C Jeynes
JH Yun
SH Moon
B Oh
Contributors: PERGAMON-ELSEVIER SCIENCE LTD (Publisher)
Publication Details: VACUUM, Vol.69(1-3), pp.11-15
Conference: 12th International School on Vacuum, Electron and Ion Technologies (VARNA, BULGARIA, 17/09/2001 - 21/09/2001)
Date published: 24/12/2002
Date submitted: 17/05/2017
Identifiers: 99513729902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Masked ion damage and implantation for device fabrication

Abstract

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