Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

T Zhang; JJ Harris; SK Clowes; M Debnath; A Bennett; LF Cohen; T Lyford; PF Fewster

doi:10.1088/0268-1242/20/12/001

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Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

Journal article

Peer reviewed

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

T Zhang, JJ Harris, SK Clowes, M Debnath, A Bennett, LF Cohen, T Lyford and PF Fewster

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.20(12), pp.1153-1156

01/12/2005

DOI: https://doi.org/10.1088/0268-1242/20/12/001

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Science & Technology

Technology

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Physics

Condensed Matter

Engineering

Materials Science

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ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

CONDENSED MATTER

MOLECULAR-BEAM EPITAXY

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Title: Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films
Creators: T Zhang
JJ Harris
SK Clowes
M Debnath
A Bennett
LF Cohen
T Lyford
PF Fewster
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.20(12), pp.1153-1156
Publisher: IOP PUBLISHING LTD
Date published: 01/12/2005
Date submitted: 17/05/2017
Identifiers: 99513715502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

Abstract

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