Abstract
Field emission measurements using 0.3 mu m thick nitrogen containing hydrogenated amorphous carbon films (alpha-C:H:N) on n(++)-Si cathodes are reported. Onset emission fields as low as 4 V mu m(-1) have been obtained using a flat plate anode configuration. Uniform emission is observed over the entire cathode area at current densities below 7 x 10(-2) mA cm(-2). At higher current density preferential emission from spots is observed. The spot emission is imaged using the ITO coated plate anode. A model based on the alpha-C:H:N acting as a space charge interlayer on the n(++)-Si is proposed to explain the emission at low electric fields. (C) 1996 American Institute of Physics.