Amorphous carbon and carbon nitride bottom gate thin film transistors

Y Miyajima; M Shkunov; SRP Silva

doi:10.1063/1.3224834

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Amorphous carbon and carbon nitride bottom gate thin film transistors

Journal article

Peer reviewed

Amorphous carbon and carbon nitride bottom gate thin film transistors

Y Miyajima, M Shkunov and SRP Silva

APPLIED PHYSICS LETTERS, Vol.95(10), ARTN 10210

07/09/2009

DOI: https://doi.org/10.1063/1.3224834

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

carbon

carbon compounds

conduction bands

inclusions

ionic conductivity

nitrogen

noncrystalline structure

Poole-Frenkel effect

pulsed laser deposition

thin film transistors

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Title: Amorphous carbon and carbon nitride bottom gate thin film transistors
Creators: Y Miyajima
M Shkunov
SRP Silva
Publication Details: APPLIED PHYSICS LETTERS, Vol.95(10), ARTN 10210
Publisher: AMER INST PHYSICS
Date published: 07/09/2009
Date submitted: 17/05/2017
Identifiers: 99513617402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Amorphous carbon and carbon nitride bottom gate thin film transistors

Abstract

Files and links (1)

Metrics

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