REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING

F MAHMOOD; H AHMED; C JEYNES; WP GILLIN

doi:10.1016/0169-4332(92)90168-W

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REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING

Journal article

Peer reviewed

REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING

F MAHMOOD, H AHMED, C JEYNES and WP GILLIN

APPLIED SURFACE SCIENCE, Vol.59(1), pp.55-62

01/05/1992

DOI: https://doi.org/10.1016/0169-4332(92)90168-W

Abstract

Science & Technology

Physical Sciences

Technology

Chemistry

Physical

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Chemistry

Materials Science

Physics

CHEMISTRY

PHYSICAL

MATERIALS SCIENCE

COATINGS & FILMS

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

SELF-ALIGNED COSI2

THIN-FILMS

INTERCONNECTION

DIFFUSION

DISILICIDE

SI

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Title: REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING
Creators: F MAHMOOD
H AHMED
C JEYNES
WP GILLIN
Publication Details: APPLIED SURFACE SCIENCE, Vol.59(1), pp.55-62
Publisher: ELSEVIER SCIENCE BV
Date published: 01/05/1992
Date submitted: 17/05/2017
Identifiers: 99513605302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING

Abstract

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