Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

JW Taylor; AS Saleh; PC Rice-Evans; AP Knights; C Jeynes

doi:10.1016/S0169-4332(99)00196-8

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Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Conference presentation

Peer reviewed

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

JW Taylor, AS Saleh, PC Rice-Evans, AP Knights and C Jeynes

APPLIED SURFACE SCIENCE, Vol.149(1-4), pp.175-180

8th International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces (SLOPOS-8) (CAPE TOWN, SOUTH AFRICA, 06/09/1998 - 12/09/1998)

01/08/1999

DOI: https://doi.org/10.1016/S0169-4332(99)00196-8

Abstract

Science & Technology

Physical Sciences

Technology

Chemistry

Physical

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Chemistry

Materials Science

Physics

CHEMISTRY

PHYSICAL

MATERIALS SCIENCE

COATINGS & FILMS

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

slow positron beam

positron annihilation

composite-Gaussian defect

RUTHERFORD BACKSCATTERING

INFRARED-ABSORPTION

IRRADIATED SILICON

SI

ANNIHILATION

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Title: Depth profiling of defects in nitrogen implanted silicon using a slow positron beam
Creators: JW Taylor
AS Saleh
PC Rice-Evans
AP Knights
C Jeynes
Contributors: ELSEVIER SCIENCE BV (Publisher)
Publication Details: APPLIED SURFACE SCIENCE, Vol.149(1-4), pp.175-180
Conference: 8th International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces (SLOPOS-8) (CAPE TOWN, SOUTH AFRICA, 06/09/1998 - 12/09/1998)
Date published: 01/08/1999
Date submitted: 17/05/2017
Identifiers: 99513339302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Abstract

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