Vacancy-related defects in ion implanted and electron irradiated silicon

AR Peaker; JH Evans-Freeman; PYY Kan; ID Hawkins; J Terry; C Jeynes; L Rubaldo

doi:10.1016/S0921-5107(99)00364-5

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Vacancy-related defects in ion implanted and electron irradiated silicon

Conference presentation

Peer reviewed

Vacancy-related defects in ion implanted and electron irradiated silicon

AR Peaker, JH Evans-Freeman, PYY Kan, ID Hawkins, J Terry, C Jeynes and L Rubaldo

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.71, pp.143-147

Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society (STRASBOURG, FRANCE, 01/06/1999 - 04/06/1999)

14/02/2000

DOI: https://doi.org/10.1016/S0921-5107(99)00364-5

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Physics

Condensed Matter

Materials Science

Physics

Laplace deep level transient spectroscopy

vacancy

divacancy

silicon

ion implant

defect

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Title: Vacancy-related defects in ion implanted and electron irradiated silicon
Creators: AR Peaker
JH Evans-Freeman
PYY Kan
ID Hawkins
J Terry
C Jeynes
L Rubaldo
Contributors: ELSEVIER SCIENCE SA (Publisher)
Publication Details: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.71, pp.143-147
Conference: Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society (STRASBOURG, FRANCE, 01/06/1999 - 04/06/1999)
Date published: 14/02/2000
Date submitted: 17/05/2017
Identifiers: 99513233902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Vacancy-related defects in ion implanted and electron irradiated silicon

Abstract

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