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Vacancy-related defects in ion implanted and electron irradiated silicon
Conference presentation   Peer reviewed

Vacancy-related defects in ion implanted and electron irradiated silicon

AR Peaker, JH Evans-Freeman, PYY Kan, ID Hawkins, J Terry, C Jeynes and L Rubaldo
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.71, pp.143-147
Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society (STRASBOURG, FRANCE, 01/06/1999–04/06/1999)
14/02/2000

Abstract

Science & Technology Technology Physical Sciences Materials Science Multidisciplinary Physics Condensed Matter Materials Science Physics Laplace deep level transient spectroscopy vacancy divacancy silicon ion implant defect
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