Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations

JW Steeds; N Peng; W Sullivan

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Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations

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Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations

JW Steeds, N Peng and W Sullivan

SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-61, pp.409-412

7th European Conference on Silicon Carbide and Related Materials (Barcelona, SPAIN, 07/09/2008 - 11/09/2008)

01/01/2009

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Materials Science

Ceramics

Materials Science

Multidisciplinary

Engineering

Materials Science

defects

photoluminescence

4H SiC

helium and proton implantation

PHOTOLUMINESCENCE

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Title: Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations
Creators: JW Steeds
N Peng
W Sullivan
Contributors: A PerezTomas
P Godignon
M Vellvehi
P Brosselard
TRANS TECH PUBLICATIONS LTD (Publisher)
Publication Details: SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-61, pp.409-412
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona, SPAIN, 07/09/2008 - 11/09/2008)
Date published: 01/01/2009
Date submitted: 17/05/2017
Identifiers: 99513113602346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Anti-site Defects are Found at Large Distances from Localised H and He Ion Implantations

Abstract

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