Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated

M.A. Foad; Jonathan England; S. Moffatt; D.G. Armour

doi:10.1109/IIT.1996.586471

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Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated

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Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated

M.A. Foad, Jonathan England, S. Moffatt and D.G. Armour

Proceedings of 11th International Conference on Ion Implantation Technology, pp.603-606

11th International Conference on Ion Implantation Technology (Austin, Texas, USA, 16/06/1996 - 21/06/1996)

1997

DOI: https://doi.org/10.1109/IIT.1996.586471

Abstract

Implants; Silicon; Annealing; Ion implantation; Boron; Current density; Spectroscopy; Electronics industry; Ion beams; Voltage

Ultra shallow junctions can be formed, amongst other techniques, by very low energy ion implantation. The Implant Division of Applied Materials have recently developed a low energy, high current ion implanter, the xRLEAP (xR family, Low Energy Advance Process). This implanter is capable of delivering product worthy beam currents, in the milli-ampere regime down to energies of few hundred electron volts. A series of B and BF/sub 2/ implants were carried out onto non-amorphised, 200 mm Si wafers using beam energies in the range 0.2 keV

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Title: Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated
Creators: M.A. Foad
Jonathan England
S. Moffatt
D.G. Armour
Publication Details: Proceedings of 11th International Conference on Ion Implantation Technology, pp.603-606
Conference: 11th International Conference on Ion Implantation Technology (Austin, Texas, USA, 16/06/1996 - 21/06/1996)
Date published: 1997
Date submitted: 13/06/2017
Identifiers: 99513108502346
Copyright: © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Academic Unit: School of Computer Science and Electronic Engineering
Resource Type: Conference presentation

Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated

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