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Reticle imaging and metrology using a CD-SEM at IMEC
Conference presentation   Peer reviewed

Reticle imaging and metrology using a CD-SEM at IMEC

Uwe F. W. Behringer, A. James, F. Felten, M. Polli, Jonathan England, Thomas Marschner and Geert Vandenberghe
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, Vol.3996, pp.128-133
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents (Munich, Germany, 15/11/1999)
03/02/2000
DOI: https://doi.org/10.1117/12.377102

Abstract

Metrology; Reticles; 193nm lithography; Deep ultraviolet; CD-SEM; Photomask; Defects; IMEC
Reticle imaging and metrology are becoming increasingly difficult as reticle features decrease in size. This paper describes some early results of top down CD-SEM reticle imaging and metrology carried out in association with the DUV and 193 nm lithography programs at IMEC. Images of reticle features and some corresponding printed wafer patterns are presented and CD-SEM and optical measurement techniques are compared.
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http://dx.doi.org/10.1117/12.377102View
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