Structure of Er-related centers in Si

JD Carey; F Priolo

doi:10.1016/S0921-4526(99)00474-3

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Structure of Er-related centers in Si

JD Carey and F Priolo

PHYSICA B-CONDENSED MATTER, Vol.273-4, pp.350-353

20th International Conference on Defects in Semiconductors (ICDS-20) (BERKELEY, CA, 26/07/1999 - 30/07/1999)

01/12/1999

DOI: https://doi.org/10.1016/S0921-4526(99)00474-3

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

erbium doped silicon

electron paramagnetic resonance

defects

optoelectronics

CRYSTALLINE SI

IMPLANTED SI

SILICON

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Title: Structure of Er-related centers in Si
Creators: JD Carey
F Priolo
Contributors: ELSEVIER SCIENCE BV (Publisher)
Publication Details: PHYSICA B-CONDENSED MATTER, Vol.273-4, pp.350-353
Conference: 20th International Conference on Defects in Semiconductors (ICDS-20) (BERKELEY, CA, 26/07/1999 - 30/07/1999)
Date published: 01/12/1999
Date submitted: 17/05/2017
Identifiers: 99512882102346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Structure of Er-related centers in Si

Abstract

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