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Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors
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Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

RA Sporea, M Trainor, N Young, JM Shannon and SRP Silva
Electron Devices, IEEE Transactions on, Vol.PP(99), pp.1-1
IEEE
2015

Abstract

Inverters Logic gates Switches Temperature Temperature dependence Transistors Complementary logic gate Schottky barrier gain noise margin (NM) polysilicon (poly-Si) source-gated transistor (SGT) temperature effects thin-film transistor.
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.
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http://dx.doi.org/10.1109/TED.2015.2412452View
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