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Temperature effects in complementary inverters made with polysilicon source-gated transistors
Journal article   Open access  Peer reviewed

Temperature effects in complementary inverters made with polysilicon source-gated transistors

RA Sporea, JM Shannon, SRP Silva, M Trainor and N Young
IEEE Transactions on Electron Devices, Vol.62(5), pp.1498-1503
01/05/2015

Abstract

Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.
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Temperature inverter symplectic1.65 MBDownloadView
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http://dx.doi.org/10.1109/TED.2015.2412452View
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