- Title
- Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling
- Creators
- A NejimNP BarradasC JeynesF CristianoE WendlerK GartnerBJ Sealy
- Contributors
- ELSEVIER SCIENCE BV (Publisher)
- Publication Details
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.139(1-4), pp.244-248
- Conference
- 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) (EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS, 26/08/1997 - 30/08/1997)
- Date published
- 01/04/1998
- Date submitted
- 17/05/2017
- Identifiers
- 99512802602346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.139(1-4), pp.244-248
5th European Conference on Accelerators in Applied Research and Technology (ECAART5) (EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS, 26/08/1997 - 30/08/1997)
01/04/1998
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