Abstract
Rutherford back-scattering (RBS) and Medium Energy Ion Scattering (MEIS) have been used to determine the lattice site occupancy of antimony (Sb) implanted into silicon (Si) and strained silicon (sSi) for ion energies of 2keV to 40keV. After annealing in the range 600-1100°C for various times, Ilall effect measurements were used to provide a measure of the percentage electrical activity. A comparison of the lattice site occupancy with the percentage electrical activity was used to confirm whether the assumption that the Hall scattering factor is equal to unity is valid. Our results demonstrate that for 40keV implants the electrical activation is about 90%. In the case of 2keV implants the electrical activation is lower and in the range 10-80%, depending on the ion fluence and annealing conditions. This reduction in activation for lower energy implants is a result of inactive Sb close to the semiconductor/native-oxide interface, or above concentrations of 4.5×10cm . Tensile strain facilitates the lattice site occupancy and electrical activation of Sb in Si by raising the doping ceiling. For both 40keV and 2keV implants, we have carried out a comparison of RBS/MEIS and Hall effect data to show that for Sb implants into both bulk Si and strained Si the Hall scattering factor is equal to unity within experimental error.