Abstract
Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence carbon ion implantation in silicon wafers at elevated temperatures, followed by high-energy heavy ion beam annealing. This work focuses on studying effects from the ion beam annealing on crystallization of SiC from implanted carbon and matrix silicon. In the ion beam annealing experiments, heavy ion beams of iodine and xenon, the neighbors in the periodic table, with different energies to different fluences, I ions at 10, 20, and 30MeV with 1-5×10 12ions/cm 2, while Xe ions at 4MeV with 5×10 13 and 1×10 14ions/cm 2, bombarded C-ion in implanted Si at elevated temperatures. X-ray diffraction, Raman scattering, infrared spectroscopy were used to characterize the formation of SiC. Non-Rutherford backscattering and Rutherford backscattering spectrometry were used to analyze changes in the carbon depth profiles. The results from this study were compared with those previously reported in similar studies. The comparison showed that ion beam annealing could indeed induce crystallization of SiC, mainly depending on the single ion energy but not on the deposited areal density of the ion beam energy (the product of the ion energy and the fluence). The results demonstrate from an aspect that the electronic stopping plays the key role in the annealing.