Abstract
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts on CdZnTe. A detailed understanding of the interface between the bulk CdZnTe and the metal contacts is required for improvements to be made. To understand these complex interfaces, a range of complementary materials characterization techniques have been employed, including x-ray photoelectron spectroscopy depth profiling, focused ion beam cross section imaging and energy dispersive x-ray spectroscopy. In this paper a number of Redlen CdZnTe detectors with asymmetric anode/cathode contacts have been investigated. The structures of the contacts were imaged and their compositions identified. It was found that the two stage electroless indium/electroless gold deposition process on 'polished only' surfaces formed a complex heterojunction on the cathode, incorporating compounds of gold, gold-tellurium, tellurium oxide (of varying stoichiometry) and cadmium chloride up to depths of several 100 nm. Trace amounts of indium were found, in the form of an indium-gold compound, or possibly indium oxide. At the surface of the CdZnTe bulk, a thin Cd depleted layer was observed. The anode heterojunction, formed by a single stage electroless gold deposition, was thinner and exhibited a simpler structure of gold and tellurium oxide. The differing (asymmetric) nature of the anode/cathode contacts gave rise to asymmetric current-voltage (I-V) behaviour and spectroscopy. © 2013 IOP Publishing Ltd.