Pump-probe transmission experiments have been performed on PbSe above the fundamental absorption edge near 4 μm in the temperature range 30 to 300 K, using the Dutch ps free-electron laser. For temperatures below 200 K and carrier densities above the threshold for stimulated emission, stimulated recombination represents the most efficient recombination mechanism with relatively fast kinetics in the 50–100-ps regime, in good agreement with earlier reports of photoluminescent emission. Above this temperature Auger recombination dominates, and the Auger coefficient C is determined from the pump-probe decay curves. In the low-temperature regime the Auger coefficient is determined from the decay curves at times beyond 100 ps. The Auger coefficient is approximately constant (with a value of about 8×10^-28 cm⁶ s^-1) between 300 and 70 K, and then drops a value of about 1×10^-28 cm⁶ s^-1 at 30 K, in good agreement with the theory for nonparabolic near-mirror bands and nondegenerate statistics. It is found that C for PbSe is between one and two orders of magnitude lower than for Hg_1-xCd_xTe of comparable band gap.