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Effects of ion implantation on electron centers in hydrogenated amorphous carbon films
Journal article   Open access  Peer reviewed

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

AA Konchits, MY Valakh, BD Shanina, SP Kolesnik, IB Yanchuk, JD Carey and SRP Silva
JOURNAL OF APPLIED PHYSICS, Vol.93(10), pp.5905-5910
15/05/2003
DOI: https://doi.org/10.1063/1.1564280

Abstract

Science & Technology Physical Sciences Physics Applied Physics DIAMOND-LIKE CARBON THIN-FILMS PARAMAGNETIC-RESONANCE RAMAN-SPECTROSCOPY GAP STATES DEFECTS EPR
Effects of ion implantation on electron centers were investigated in hydrogenated amorphous carbon films. Electron spin resonance and Raman spectra measurements were carried out during the analysis. It was found that ion implantation reduces the contents of hydrogen and initiates the radiation defects in hydrogenated amorphous carbon films.
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