NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

S LYNCH; M MURTAGH; GM CREAN; PV KELLY; M OCONNOR; C JEYNES

doi:10.1016/0040-6090(93)90089-8

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NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

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NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

S LYNCH, M MURTAGH, GM CREAN, PV KELLY, M OCONNOR and C JEYNES

THIN SOLID FILMS, Vol.233(1-2), pp.199-202

1ST INTERNATIONAL CONF ON SPECTROSCOPIC ELLIPSOMETRY (MINIST RECH & ESPACE, PARIS, FRANCE, 11/01/1993 - 14/01/1993)

12/10/1993

DOI: https://doi.org/10.1016/0040-6090(93)90089-8

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Materials Science

Physics

MATERIALS SCIENCE

COATINGS & FILMS

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

SPECTROSCOPIC ELLIPSOMETRY

REFLECTANCE

GAAS

SI

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Title: NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES
Creators: S LYNCH
M MURTAGH
GM CREAN
PV KELLY
M OCONNOR
C JEYNES
Contributors: ELSEVIER SCIENCE SA LAUSANNE (Publisher)
Publication Details: THIN SOLID FILMS, Vol.233(1-2), pp.199-202
Conference: 1ST INTERNATIONAL CONF ON SPECTROSCOPIC ELLIPSOMETRY (MINIST RECH & ESPACE, PARIS, FRANCE, 11/01/1993 - 14/01/1993)
Date published: 12/10/1993
Date submitted: 17/05/2017
Identifiers: 99512527902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

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