Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities

JV Anguita; SRP Silva

doi:10.1016/S0925-9635(99)00324-6

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Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities

Conference presentation

Peer reviewed

Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities

JV Anguita and SRP Silva

DIAMOND AND RELATED MATERIALS, Vol.9(3-6), pp.777-780

10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) (PRAGUE, CZECH REPUBLIC, 12/09/1999–17/09/1999)

01/04/2000

DOI: https://doi.org/10.1016/S0925-9635(99)00324-6

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

MATERIALS SCIENCE

MULTIDISCIPLINARY

amorphous carbon

annealing

defect

spectroscopy

TETRAHEDRAL AMORPHOUS-CARBON

THIN-FILMS

OPTICAL-PROPERTIES

MECHANISM

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Title: Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities
Creators: JV Anguita
SRP Silva
Contributors: ELSEVIER SCIENCE SA (Publisher)
Publication Details: DIAMOND AND RELATED MATERIALS, Vol.9(3-6), pp.777-780
Conference: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) (PRAGUE, CZECH REPUBLIC, 12/09/1999–17/09/1999)
Publication Date: 01/04/2000
Identifiers: 99512363202346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities

Abstract

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