High concentration Mn ion implantation in Si

N Peng; C Jeynes; MJ Bailey; D Adikaari; V Stolojan; RP Webb

doi:10.1016/j.nimb.2009.01.065

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High concentration Mn ion implantation in Si

Journal article

Peer reviewed

High concentration Mn ion implantation in Si

N Peng, C Jeynes, MJ Bailey, D Adikaari, V Stolojan and RP Webb

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.267(8-9), pp.1623-1625

01/05/2009

DOI: https://doi.org/10.1016/j.nimb.2009.01.065

Abstract

Science & Technology

Instruments & Instrumentation

Nuclear Science & Technology

Atomic

Molecular & Chemical

Nuclear

Dilute magnetic semiconductor

Ion implantation

Si

Mn doping

SILICON

Technology

Physical Sciences

Physics

Semiconductors

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Title: High concentration Mn ion implantation in Si
Creators: N Peng
C Jeynes
MJ Bailey
D Adikaari
V Stolojan
RP Webb
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.267(8-9), pp.1623-1625
Publisher: ELSEVIER SCIENCE BV
Publication Date: 01/05/2009
Identifiers: 99512273202346; WOS:000266519900102
Academic Unit: Department of Chemistry
Language: English
Resource Type: Journal article

High concentration Mn ion implantation in Si

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