Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans

JA Sharp; NEB Cowern; RP Webb; D Giubertoni; S Gennaro; M Bersani; MA Foad; KJ Kirkby

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Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans

Conference presentation

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Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans

JA Sharp, NEB Cowern, RP Webb, D Giubertoni, S Gennaro, M Bersani, MA Foad and KJ Kirkby

Ion Implantation Technology, Vol.866, pp.33-36

16th International Conference on Ion Implantation Technology (Marseille, FRANCE, 11/06/2006 - 16/06/2006)

01/01/2006

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

Condensed Matter

Physics

boron

laser annealing

deactivation

silicon

ULTRA-SHALLOW JUNCTIONS

THERMAL-STABILITY

SILICON

ACTIVATION

REACTIVATION

PROFILES

DOPANTS

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Title: Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
Creators: JA Sharp
NEB Cowern
RP Webb
D Giubertoni
S Gennaro
M Bersani
MA Foad
KJ Kirkby
Contributors: KJ Kirkby
D Chivers
R Gwilliam
A Smith
AMER INST PHYSICS (Publisher)
Publication Details: Ion Implantation Technology, Vol.866, pp.33-36
Conference: 16th International Conference on Ion Implantation Technology (Marseille, FRANCE, 11/06/2006 - 16/06/2006)
Date published: 01/01/2006
Date submitted: 17/05/2017
Identifiers: 99512264302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans

Abstract

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