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Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)
Journal article

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

K Shcherbachev and MJ Bailey
Physica Status Solidi (A) Applications and Materials, Vol.208(11), pp.2576-2581
2011
url
http://dx.doi.org/10.1002/pssa.201184259View
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