The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

P Sharma; JV Anguita; V Stolojan; SJ Henley; SRP Silva

doi:10.1088/0957-4484/21/29/295603

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The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

Journal article

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The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

P Sharma, JV Anguita, V Stolojan, SJ Henley and SRP Silva

NANOTECHNOLOGY, Vol.21(29), pp.?-?

23/07/2010

DOI: https://doi.org/10.1088/0957-4484/21/29/295603

Abstract

Science & Technology

Technology

Physical Sciences

Nanoscience & Nanotechnology

Materials Science

Multidisciplinary

Physics

Applied

Science & Technology - Other Topics

Materials Science

Physics

AMORPHOUS-SILICON

RAMAN-SPECTRA

EVAPORATION

SCATTERING

SHAPE

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Title: The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers
Creators: P Sharma
JV Anguita
V Stolojan
SJ Henley
SRP Silva
Publication Details: NANOTECHNOLOGY, Vol.21(29), pp.?-?
Publisher: IOP PUBLISHING LTD
Date published: 23/07/2010
Date submitted: 16/11/2011
Identifiers: 99512223502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

Abstract

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