Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

AN Gruzintsev; AN Redkin; C Opoku; MN Shkunov

doi:10.1134/S1063782613040106

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Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

Journal article

Peer reviewed

Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

AN Gruzintsev, AN Redkin, C Opoku and MN Shkunov

SEMICONDUCTORS, Vol.47(4), pp.538-542

01/04/2013

DOI: https://doi.org/10.1134/S1063782613040106

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

OPTICAL-PROPERTIES

ROOM-TEMPERATURE

NANOWIRE

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Title: Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage
Creators: AN Gruzintsev
AN Redkin
C Opoku
MN Shkunov
Publication Details: SEMICONDUCTORS, Vol.47(4), pp.538-542
Publisher: MAIK NAUKA/INTERPERIODICA/SPRINGER
Date published: 01/04/2013
Date submitted: 17/05/2017
Identifiers: 99512091802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

Abstract

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