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Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool
Journal article   Open access   Peer reviewed

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

C Jeynes, NP Barradas, PK Marriott, G Boudreault, M Jenkin, E Wendler and RP Webb
JOURNAL OF PHYSICS D-APPLIED PHYSICS, Vol.36(7), pp.R97-R126
07/04/2003
DOI: https://doi.org/10.1088/0022-3727/36/7/201

Abstract

Science & Technology Physical Sciences Physics Applied research Physics PHYSICS APPLIED RUTHERFORD BACKSCATTERING SPECTRA SCATTERING CROSS-SECTION AMORPHOUS GALLIUM NITRIDE RESONANCE PLASMA SOURCE MAXIMUM-ENTROPY METHOD ELASTIC BACKSCATTERING NUCLEAR MICROPROBE SURFACE-ROUGHNESS ALPHA-PARTICLES METAL/CERAMIC INTERFACES
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http://dx.doi.org/10.1088/0022-3727/36/7/201View
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