Surrey researchers Sign in
Back
Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool
Journal article   Open access  Peer reviewed

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

C Jeynes, NP Barradas, PK Marriott, G Boudreault, M Jenkin, E Wendler and RP Webb
JOURNAL OF PHYSICS D-APPLIED PHYSICS, Vol.36(7), pp.R97-R126
07/04/2003
DOI: https://doi.org/10.1088/0022-3727/36/7/201

Abstract

Science & Technology Physical Sciences Physics Applied Physics PHYSICS APPLIED RUTHERFORD BACKSCATTERING SPECTRA SCATTERING CROSS-SECTION AMORPHOUS GALLIUM NITRIDE RESONANCE PLASMA SOURCE MAXIMUM-ENTROPY METHOD ELASTIC BACKSCATTERING NUCLEAR MICROPROBE SURFACE-ROUGHNESS ALPHA-PARTICLES METAL/CERAMIC INTERFACES
pdf
TopicalReview-CJcopyright3.99 MBDownloadView
TextSRIDA,  Open Access
url
http://dx.doi.org/10.1088/0022-3727/36/7/201View
Published (Version of record)
url
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182586400001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View
Author

Metrics

820 File views/ downloads
41 Record Views
163 Times Cited - Web of Science

Details

Usage Policy

Usage details for all content viewed and downloaded in this site are shared with IRUS-UK (Institutional Repository Usage Statistics UK). Cookies are used to remember your decision. Click Accept to accept usage details sharing and the cookies.

Learn more